Distributed feedback gain-coupled lasers based on InGaAs quantum-wire arrays

被引：7
|
作者：
Robadey, J
Marti, U
Miles, RO
Glick, M
Filipowitz, F
Achtenhagen, M
Martin, D
MorierGenoud, F
Silva, PC
Magnenat, Y
Jouneau, PH
Bobard, F
Reinhart, FK
机构：
[1] IBM CORP,DIV RES,ZURICH RES LAB,CH-8803 RUSCHLIKON,SWITZERLAND
[2] ECOLE POLYTECH FED LAUSANNE,CTR ELECTRON MICROSCOPY,CH-1015 LAUSANNE,SWITZERLAND
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1997年 / 9卷 / 01期
关键词：
quantum wire; distributed feddback laser; semiconductor laser; molecular beam epitaxial growth;
D O I：
10.1109/68.554152
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Fabrication and characterization of a current-injected InGaAs-GaAs quantum-wire gain-coupled distributed feedback (DFB) laser operating at 77 K at a wavelength of 923 nm are presented, Threshold current densities in broad area lasers were measured to be as low as 160 A/cm(2), The side-mode suppression ratio at twice threshold is 35 dB. A 4-mu m rib waveguide device has a threshold of 14 mA, The patterning process for the second-order DFB grating fabricated with deep UV holography and wet-chemical etching is described.
引用
收藏
页码：5 / 7
页数：3
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