Modelling of crosstalk in differential through silicon vias for three-dimensional integrated circuits

被引：1
|
作者：
Pan, Jin-Wei [1 ]
Fu, Kai [1 ]
Liu, Qi [1 ]
Zhao, Wen-Sheng [1 ]
Dong, Linxi [1 ]
Wang, Gaofeng [1 ]
机构：
[1] Hangzhou Dianzi Univ, Sch Elect & Informat, Minist Educ, Key Lab RF Circuits & Syst, Hangzhou 310018, Zhejiang, Peoples R China
来源：
IET MICROWAVES ANTENNAS & PROPAGATION | 2019年 / 13卷 / 10期
基金：
中国国家自然科学基金;
关键词：
crosstalk; three-dimensional integrated circuits; equivalent circuits; silicon; integrated circuit modelling; integrated circuit noise; interference suppression; crosstalk effects; D-TSVs; equivalent circuit model; circuit elements; noise coupling; silicon substrate; differential through silicon vias; three-dimensional full-wave field solver HFSS; 3D HFSS; floating silicon substrate; Si; THROUGH-SILICON;
D O I：
10.1049/iet-map.2018.5297
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The crosstalk effects of differential through silicon vias (D-TSVs) are studied. The equivalent circuit model is developed, with the circuit elements extracted analytically. Using the three-dimensional (3D) full-wave field solver HFSS, the circuit model is validated up to 100 GHz. By virtue of the circuit model, the noise couplings in the D-TSVs are evaluated. It is found that the noise coupling can be cancelled in the D-TSVs for a particular case. Finally, the influence of floating silicon substrate on the crosstalk in the D-TSVs is investigated.
引用
收藏
页码：1529 / 1535
页数：7
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