RF Compact Modeling of High-voltage MOSFETs

被引：7

作者：

Bazigos, Antonios ^{[1
]}

Krummenacher, Francois ^{[1
]}

Sallese, Jean-Michel ^{[1
]}

Bucher, Matthias ^{[2
]}

Seebacher, Ehrenfried ^{[3
]}

Posch, Werner ^{[3
]}

Molnar, Kund ^{[3
]}

Tang, Mingchun ^{[3
]}

机构：

[1] Ecole Polytech Fed Lausanne, CH-1015 Ecublens, Switzerland

[2] Tech Univ Crete, Khania 73132, Greece

[3] Austriamicrosyst AG, A-8141 Unterpremstatten, Austria

来源：

IETE JOURNAL OF RESEARCH | 2012年 / 58卷 / 03期

关键词：

Drift region; High-frequency regime; High-Voltage MOSFET; HV-MOS; LDMOS; Physics-based analytical compact model; RF; PARAMETER-EXTRACTION; MOS DEVICES; TRANSISTORS; DESIGN;

D O I：

10.4103/0377-2063.97329

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-Voltage MOSFET is used in a wide variety of applications covering from power systems up to RF-IC. Compact models that describe the high-frequency behavior of the device are required to predict high-frequency operation and switching capabilities of these elements in HV state-of-the-art systems. In this paper, an RF model is presented and verified against extensive Y-parameter measurements, which were carried out on a long channel Lateral double-Diffusion MOS device. Assessment of the model with measurements confirms the validity of this approach.

引用

页码：214 / 221

页数：8

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