Resonance behavior of the defect-induced Raman mode of single-chirality enriched carbon nanotubes

被引:15
|
作者
Laudenbach, Jan [1 ]
Hennrich, Frank [2 ]
Telg, Hagen [3 ]
Kappes, Manfred [4 ]
Maultzsch, Janina [1 ]
机构
[1] Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36, D-10623 Berlin, Germany
[2] KIT, Inst Nanotechnol, D-76344 Eggenstein Leopoldshafen, Germany
[3] Los Alamos Natl Lab, CINT, Los Alamos, NM 87545 USA
[4] KIT, Inst Nanotechnol, D-76131 Karlsruhe, Germany
基金
欧洲研究理事会;
关键词
SEPARATION; SCATTERING; SPECTRA;
D O I
10.1103/PhysRevB.87.165423
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a resonance Raman study of the disorder-induced D mode in a sample highly enriched with semiconducting (9,7) single-walled carbon nanotubes in the excitation energy range of 1.49-2.05 eV. The intensity of the D mode shows a resonance behavior near the optical transition of the (9,7) tube. The well-known dispersion of the D-mode frequency, on the other hand, is not observed at the resonance, but only above a certain excitation energy. We explain our results by numerical simulations of the D-mode spectra. DOI: 10.1103/PhysRevB.87.165423
引用
收藏
页数:7
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