High Efficiency and Low Distortion GaN MMIC Power Amplifier for 7 Ghz Applications

被引：0
|
作者：
Giofre, Rocco [1 ]
Colantonio, Paolo [1 ]
Giannini, Franco [1 ]
机构：
[1] Univ Roma Tor Vergata, Dept Elect Engn, Via Politecn 1, I-00133 Rome, Italy
来源：
2016 21ST INTERNATIONAL CONFERENCE ON MICROWAVE, RADAR AND WIRELESS COMMUNICATIONS (MIKON) | 2016年
关键词：
Power amplifier; GaN; high linearity; high efficiency; backhaul;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The guidelines for designing a high efficiency and low distortion 2-stages Gallium Nitride (GaN) power amplifier (PA) are presented. In particular, the developed approach to mitigate the phase distortion (AM/PM) without worsening the efficiency and gain features is adopted to design a 7 GHz PA based on 0.25 mu m GaN process from TriQuint. When tested with continuous wave signals the PA shows a saturated output power higher than 37 dBm, with an efficiency larger than 60 % and an AM/AM and AM/PM distortions lower than 2 dB and +/- 1 deg, respectively. The MMIC chip size is 3x3 mm(2).
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页数：4
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