Sub-200 ps spin transfer torque switching in in-plane magnetic tunnel junctions with interface perpendicular anisotropy

被引：40

作者：

Zhao, Hui ^{[1
]}

Glass, Brian ^{[1
]}

Amiri, Pedram Khalili ^{[2
]}

Lyle, Andrew ^{[1
]}

Zhang, Yisong ^{[1
]}

Chen, Yu-Jin ^{[2
]}

Rowlands, Graham ^{[2
]}

Upadhyaya, Pramey ^{[2
]}

Zeng, Zhongming ^{[2
]}

Katine, J. A. ^{[3
]}

Langer, Juergen ^{[4
]}

Galatsis, Kosmas ^{[2
]}

Jiang, Hongwen ^{[2
]}

Wang, Kang L. ^{[2
]}

Krivorotov, Ilya N. ^{[2
]}

Wang, Jian-Ping ^{[1
]}

机构：

[1] Univ Minnesota, Minneapolis, MN 55455 USA

[2] Univ Calif Los Angeles, Los Angeles, CA 90095 USA

[3] Hitachi Global Storage Technol, San Jose, CA 95135 USA

[4] Singulus Technol, D-63796 Kahl Main, Germany

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2012年 / 45卷 / 02期

关键词：

D O I：

10.1088/0022-3727/45/2/025001

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ultrafast spin transfer torque (STT) switching in an in-plane MgO magnetic tunnel junction with 50 nm x 150 nm elliptical shape was demonstrated in this paper. Switching speeds as short as 165 ps and 190 ps at 50% and 98% switching probabilities, respectively, were observed without external field assistance in a thermally stable junction with a 101% tunnelling magnetoresistance ratio. The minimum writing energy of P-AP switching for 50% and 98% switching probability are 0.16 pJ and 0.21 pJ, respectively. The observed ultrafast switching is believed to occur because of partially cancelled out-of-plane demagnetizing field in the free layer from interface perpendicular anisotropy between the MgO layer and the Co20Fe60B20 layer. High J/J(c0) ratio and magnetization nucleation at the edge of free layer, which result from the reduced perpendicular demagnetizing field, are possibly two major factors that contribute to the ultrafast STT switching.

引用

页数：4

共 50 条

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