Proton microbeam irradiation effects on PtBA polymer

被引：2
|
作者：
Kamila, J.
Roy, S.
Bhattacharjee, K.
Rout, B.
Dev, B. N.
Guico, R.
Wang, J.
Haberl, A. W.
Ayyub, P.
Satyam, P. V.
机构：
[1] Inst Phys, Bhubaneswar 751005, Orissa, India
[2] BJB Jr Coll, Dept Phys, Bhubaneswar 751014, Orissa, India
[3] Louisiana Accelerator Ctr, Lafayette, LA 70504 USA
[4] SUNY Albany, Dept Phys, Albany, NY 12222 USA
[5] Argonne Natl Lab, Adv Photon Source, Argonne, IL 60439 USA
[6] Tata Inst Fundamental Res, DCMP&MS, Bombay 400005, Maharashtra, India
来源：
BULLETIN OF MATERIALS SCIENCE | 2006年 / 29卷 / 02期
关键词：
ion micro-beam; pattern generation; PtBA polymer; Ge on polymers;
D O I：
10.1007/BF02704600
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Proton beam lithography has made it possible to make various types of 3D-structures in polymers. Usually PMMA, SU-8, PS polymers have been used as resist materials for lithographic purpose. Microbeam irradiation effects on poly-tert-butyl-acrylate (PtBA) polymer using 2.0 MeV proton microbeam are reported. Preliminary results on pattern formation on PtBA are carried out as a function of fluence. After writing the pattern, a thin layer of Ge is deposited. Distribution of Ge in pristine and ion beam patterned surface of PtBA polymer is studied using the optical and secondary electron microscopic experimental methods.
引用
收藏
页码：101 / 105
页数：5
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