New system of self-assembled GaSb/GaP quantum dots

被引：7
|
作者：
Abramkin, D. S. [1 ]
Putyato, M. A. [1 ]
Gutakovskii, A. K. [1 ]
Semyagin, B. R. [1 ]
Preobrazhenskii, V. V. [1 ]
Shamirzaev, T. S. [1 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2012年 / 46卷 / 12期
基金：
俄罗斯基础研究基金会;
关键词：
LOMER DISLOCATION; TRANSITION; SINGLE; STRAIN;
D O I：
10.1134/S1063782612120020
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The atomic structure and energy spectrum of self-assembled GaSb/GaP quantum dots are discussed. It is shown that the quantum dots consist mainly of fully relaxed GaSb and have type-I band alignment with the ground electron state at the indirect valley of the GaSb conduction band.
引用
收藏
页码：1534 / 1538
页数：5
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