Electrical characterization of AlGaN/GaN on AlN substrates

被引：12
|
作者：
Mitchel, W. C. [1 ]
Elhamri, S. [2 ]
Landis, G. [1 ]
Gaska, R. [3 ]
Schujman, S. B. [4 ]
Schowalter, L. J. [4 ]
机构：
[1] USAF, Res Lab, MLPS, Wright Patterson AFB, OH 45433 USA
[2] Univ Dayton, Dept Phys, Dayton, OH 45469 USA
[3] Sensor Electron Technol Inc, Columbia, SC 29209 USA
[4] Green Isl, Crystal IS, Greenport, NY 12183 USA
来源：
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 6 | 2008年 / 5卷 / 06期
关键词：
D O I：
10.1002/pssc.200778470
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The results of an electrical transport study of an AlGaN/GaN heterostructure grown on a bulk AlN substrate are presented. Temperature dependent Hall effect and magnetoresistance measurements were made on. an MOCVD grown heterostructure, The temperature dependences of the carrier concentration and mobility are characteristic of a two-dimensional electron gas (2DEG). the carrier concentration was 1.19X10(13) cm(2) at room temperature and 1.02x10(13) cm(-2) at 77 K while the mobility was 1100 cm(2)/Vs at room temperature and 5280 cm(2)/Vs at 77K The magnetoresistance measurements revealed the presence of Shubnikov - de Haas (SdH) oscillations. Illumination of the sample resulted in a persistent photocurrent, and an enhanced SdH oscillation amplitude with, aft increased quantum scattering time. The ratio of the, classical to quantum scattering times, tau(c)/tau(q) was 4.3, which is similar to values for AlGaN/GaN structures on other substrates.
引用
收藏
页码：1550 / +
页数：2
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