Analysis of High-Frequency Modulation Response of Strongly Injection-Locked Cascaded Semiconductor Ring Lasers

被引：11
|
作者：
Smolyakov, Gennady A. [1 ]
Fichou, Yann [1 ]
Osinski, Marek [1 ]
机构：
[1] Univ New Mexico, Ctr High Technol Mat, Albuquerque, NM 87106 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2012年 / 48卷 / 12期
基金：
美国国家科学基金会;
关键词：
Direct modulation; modulation response; monolithic integration; optical injection locking; semiconductor ring lasers; STRONG OPTICAL-INJECTION; MU-M VCSELS; 1.55-MU-M VCSELS; BANDWIDTH ENHANCEMENT; RELAXATION OSCILLATION; LIGHT INJECTION; DYNAMIC-RANGE; LOCKING; SUBJECT; REDUCTION;
D O I：
10.1109/JQE.2012.2222869
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel scheme for modulation bandwidth enhancement and tailoring is presented. This scheme involves a distributed Bragg reflector master laser monolithically integrated with two cascaded strongly injection-locked whistle-geometry semiconductor microring lasers. Enhanced high-speed performance of the novel scheme is confirmed through numerical modeling.
引用
收藏
页码：1568 / 1577
页数：10
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