The Mn site in Mn-doped GaAs nanowires: an EXAFS study

被引：3
|
作者：
d'Acapito, F. [1 ]
Rovezzi, M. [2 ]
Boscherini, F. [1 ,3 ]
Jabeen, F. [4 ,5 ]
Bais, G. [4 ,5 ]
Piccin, M. [4 ,6 ]
Rubini, S. [4 ]
Martelli, F. [4 ,7 ]
机构：
[1] ESRF GILDA CRG, CNR IOM OGG, F-38043 Grenoble, France
[2] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[3] Univ Bologna, Dept Phys, I-40127 Bologna, Italy
[4] CNR IOM, I-34149 Basovizza Trieste, Italy
[5] Sincrotrone Trieste SCpA, I-34149 Basovizza Trieste, Italy
[6] Soitec SA, F-38190 Bernin, France
[7] CNR IMM, I-00133 Rome, Italy
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2012年 / 27卷 / 08期
关键词：
MOLECULAR-BEAM EPITAXY; MN/GAAS DIGITAL ALLOYS; FERROMAGNETIC GA1-XMNXAS; MAGNETIC-PROPERTIES; CURIE-TEMPERATURE; INDUCED GROWTH; SEMICONDUCTORS; LOCATION;
D O I：
10.1088/0268-1242/27/8/085001
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present an EXAFS study of the Mn atomic environment in Mn-doped GaAs nanowires. Mn doping has been obtained either via the diffusion of the Mn used as seed for the nanowire growth or by providing Mn during the growth of Au-induced wires. As a general finding, we observe that Mn forms chemical bonds with As but is not incorporated in a substitutional site. In Mn-induced GaAs wires, Mn is mostly found bonded to As in a rather disordered environment and with a stretched bond length, reminiscent of that exhibited by MnAs phases. In Au-seeded nanowires, along with stretched MnAs coordination, we have found the presence of Mn in a MnAu intermetallic compound.
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页数：6
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