Control of the interface in SiC/Al composites

Both SiCox2/2014Al and SiCox6/(Al+2 Mg) composites were prepared using SiC particles having an amorphous SiO2 layers. When the SiCox2/2014Al composite is exposed at approximately 600 °C, the single SiO2 layer formed at the SiC surface reacts with Al and Mg within the matrix alloy to form Si and MgAl2O4 crystals at the expense of SiO2 layer. In the case of the SiCox6/(Al+2 Mg) composite, heating the composite at 610 °C resulted in the SiC surface to be completely covered with a protective interface consisted with Si and MgAl2O4 crystals. A combination of passive oxidation of SiC and the Mg addition into the Al matrix was efficient for forming a stable interface in the SiC/Al composite.