Grain growth inhibition in thin nanocrystalline Au films by grain boundary diffusion and oxidation of Ti

被引:8
|
作者
Strassberg, R. [1 ]
Klinger, L. [1 ]
Kauffmann, Y. [1 ]
Rabkin, E. [1 ]
机构
[1] Technion Israel Inst Technol, Dept Mat Sci & Engn, IL-32000 Haifa, Israel
基金
以色列科学基金会;
关键词
Thin films; Grain boundary diffusion; Grain boundary migration; Grain growth; Oxidation; TRIPLE JUNCTIONS; SURFACE; INTERDIFFUSION; MIGRATION; STABILITY; MOTION;
D O I
10.1016/j.actamat.2012.09.076
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We studied grain growth in thin nanocrystalline Au films deposited on a sapphire substrate with and without an ultrathin Ti underlayer (adhesion promoter). The samples were annealed at 200 degrees C for 2 h in air. The reference thin Au film without a Ti underlayer exhibited significant grain growth during annealing, whereas no changes in microstructure of the Au layer were observed in the Au/Ti bilayers. This stabilization of the microstructure of the Au layer was attributed to thermal grain boundary grooves on the Au surface filled with Ti oxide. The grooves exhibited an elongated morphology characterized by a low apparent dihedral angle value, atypical for thermal grain boundary grooves in pure metals. We demonstrated that grooves with this morphology are very efficient in pinning grain boundary motion. We also developed a quantitative model of grain boundary grooving coupled with grain boundary interdiffusion in thin bilayer films. The model predicted the formation of long, narrow grooves at the grain boundaries, which are very efficient in suppressing grain growth in nanocrystalline thin films. (C) 2012 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码:529 / 539
页数:11
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