Lattice relaxation of ZnS grown on GaP investigated by high-resolution X-ray diffraction and transmission electron microscopy

被引：3
|
作者：
Ichino, Kunio [1 ]
Nishigaki, Akinori [1 ]
Yamauchi, Akiyoshi [1 ]
机构：
[1] Tottori Univ, Dept Elect & Informat, Tottori 6808552, Japan
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 8-9 | 2012年 / 9卷 / 8-9期
关键词：
ZnS; GaP; critical thickness; reciprocal space map; MBE; MOLECULAR-BEAM EPITAXY; DISLOCATIONS; THICKNESS;
D O I：
10.1002/pssc.201100596
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The lattice-relaxation process of ZnS grown on (001) GaP substrates has been investigated in detail by using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM). Reciprocal space maps (RSMs) of 224 XRD peaks for ZnS and GaP clearly show transition from coherent growth to relaxed growth with increasing the thickness. For a 32nm-thick ZnS layer the RSM indicates almost coherent growth to GaP substrate; it also shows, however, a sign of the initiation of lattice relaxation. The cross-sectional lattice image of the 32nm thick ZnS layer observed by TEM exhibits defects probably resulting from lattice relaxation, while no such defects are seen for the 21 nm thick layer. Therefore, the critical thickness of ZnS on GaP seems to be between 21 nm and 32 nm. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
引用
收藏
页码：1744 / 1747
页数：4
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