Titanium etching in fluorinated low-pressure radiofrequency plasmas

被引：0

作者：

Amirov, II ^{[1
]}

Slovetskii, DI ^{[1
]}

机构：

[1] AV TOPCHIEV PETROCHEM SYNTH INST,MOSCOW 117912,RUSSIA

来源：

HIGH ENERGY CHEMISTRY | 1997年 / 31卷 / 03期

关键词：

D O I：

暂无

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Interaction of titanium with the products of degradation of CF4, CF4 + O-2, and SF6 in a low-pressure, capacitively coupled radiofrequency discharge was studied using controlled fluxes of neutral and charged species. Ion bombardment was shown to result in sputtering of a reaction product film formed on the titanium surface, whereas electron bombardment enhanced its formation. Kinetic features of titanium etching in CF4 + O-2 and SF6 discharges differ because of the different nature of heavy radicals produced in the plasmas.

引用

页码：202 / 206

页数：5

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