A Low-Power Triple-Loop Feedback Broadband LNA in a 130nm SiGe BiCMOS Technology

被引：0
|
作者：
Sene, Badou [1 ,2 ]
Issakov, Vadim [1 ]
机构：
[1] Infineon Technol AG, Campeon 1-12, D-85579 Neubiberg, Germany
[2] Ruhr Univ Bochum, Univ Str 150, D-44780 Bochum, Germany
来源：
2018 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS) | 2018年
关键词：
D O I：
暂无
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper a low-power Low Noise Amplifier (LNA) with ultra broad bandwidth is presented. We propose a novel circuit-level technique using a triple feedback loop to optimize simultaneously gain, bandwidth and impedance matching without the penalty of added DC power dissipation. The circuit has been fabricated using a 130 nm silicon-germanium (SiGe) bipolar CMOS (BiCMOS) technology. The LNA has a peak gain of 9.3 dB, a minimum noise figure of 4.6 dB and an input compression point (IP1dB) higher than -9.9 dBm. It consumes only 5.4 mW using a single 1.5 V supply voltage, while working over a bandwidth from 14 to 58 GHz and occupying an area of 0.6 x 0.48 mm(2) including pads.
引用
收藏
页码：114 / 117
页数：4
相关论文
共 50 条
  • [1] A V-Band Low-Power Compact LNA in 130-nm SiGe BiCMOS Technology
    Sutbas, Batuhan
    Ng, Herman Jalli
    Wessel, Jan
    Koelpin, Alexander
    Kahmen, Gerhard
    [J]. IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2021, 31 (05) : 497 - 500
  • [2] A W-Band Low-Power Gilbert Cell Mixer with Image Rejection in 130nm SiGe BiCMOS Technology
    Smirnova, Kateryna
    Kaynak, Mehmet
    Ulusoy, Ahmet Cagri
    [J]. 2022 52ND EUROPEAN MICROWAVE CONFERENCE (EUMC), 2022,
  • [3] A W-Band Low-Power Gilbert Cell Mixer with Image Rejection in 130nm SiGe BiCMOS Technology
    Smirnova, Kateryna
    Kaynak, Mehmet
    Ulusoy, Ahmet Cagri
    [J]. 2022 52ND EUROPEAN MICROWAVE CONFERENCE (EUMC), 2022,
  • [4] A Broadband Power Amplifier in 130-nm SiGe BiCMOS Technology
    Zhou P.
    Chen J.
    Yan P.
    Hou D.
    Gao H.
    Hong W.
    [J]. Chen, Jixin (jxchen@seu.edu.cn), 1600, Institute of Electrical and Electronics Engineers Inc. (04): : 44 - 47
  • [5] A Broadband Logarithmic Power Detector Using 130 nm SiGe BiCMOS Technology
    Gong, Yunyi
    Lee, Seokchul
    Ying, Hanbin
    Omprakash, Anup P.
    Gebara, Edward
    Gu, Huifang
    Nicholls, Charles
    Cressler, John D.
    [J]. 2019 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS 2019), 2019,
  • [6] Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS
    Franzese, Aniello
    Eissa, Mohamed H.
    Mausolf, Thomas
    Kissinger, Dietmar
    Negra, Renato
    Malignaggi, Andrea
    [J]. 2020 IEEE BICMOS AND COMPOUND SEMICONDUCTOR INTEGRATED CIRCUITS AND TECHNOLOGY SYMPOSIUM (BCICTS), 2020,
  • [7] Low-Power and Low-Noise Programmable Frequency Dividers in a 130 nm SiGe BiCMOS Technology
    Ergintav, Arzu
    Herzel, Frank
    Borngraeber, Johannes
    Ng, Herman Jalli
    Kissinger, Dietmar
    [J]. 2017 IEEE 15TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2017, : 105 - 108
  • [8] A 180 GHz Frequency Multiplier in a 130nm SiGe BiCMOS Technology
    Girg, Thomas
    Beck, Christopher
    Dietz, Marco
    Hagelauer, Amelie
    Kissinger, Dietmar
    Weigel, Robert
    [J]. 2016 14TH IEEE INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS), 2016,
  • [9] A Low-Power Wideband D-Band LNA in a 130 nm BiCMOS Technology for Imaging Applications
    Aguilar, E.
    Hagelauer, A.
    Kissinger, D.
    Weigel, R.
    [J]. 2018 IEEE 18TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF), 2018, : 27 - 29
  • [10] A 130-160 GHz Frequency Tripler in a 130nm SiGe BiCMOS Technology
    Gavalas, Panteleimon
    Manouras, Vasileios
    Papananos, Ioannis
    [J]. 2022 30TH AUSTRIAN WORKSHOP ON MICROELECTRONICS (AUSTROCHIP 2022), 2022, : 17 - 20
12345