Depletion-mode TFT made of low-temperature poly-Si

被引：4

作者：

Son, YD ^{[1
]}

Yang, KD ^{[1
]}

Bae, BS ^{[1
]}

Jang, J ^{[1
]}

Hong, M ^{[1
]}

Kim, SJ ^{[1
]}

机构：

[1] Kyung Hee Univ, Adv Discplay Res Ctr, Seoul 130701, South Korea

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2006年 / 53卷 / 05期

关键词：

depletion-mode thin-film transistor (TFT); polycrystalline silicon thin-film transistor (poly-Si TFT);

D O I：

10.1109/TED.2006.872359

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief reports the fabrication and characterization of a depletion-mode p-channel low-temperature polycrystalline silicon (poly-Si) thin-film transistor (TFT). The poly-Si channel was significantly doped by B ions to make a hole-accumulation layer at zero gate voltage. The depletion-mode poly-Si TFT is normally ON-state, so that the current can flow from the source to the drain at zero gate voltage. The TFT exhibited a field-effect mobility of 60 cm(2)/V center dot s, a threshold voltage of 18 V, an on/of current ratio of 10(6), and a gate voltage swing of 1.1 V/dec.

引用

页码：1260 / 1262

页数：3

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