CMOS IMPATT impedance and design parameters for millimetre-wave applications

This article describes lateral CMOS IMPATT diodes designed, monolithically integrated and fabricated in 0.18 mu m CMOS technology. IMPATT diode impedance and avalanche frequency were confirmed in a measurement from 40MHz to 110GHz. Avalanche tuning range measured from 24GHz to 44GHz with maximum IMPATT negative resistance of 120 at 38GHz with 28mA bias current. Furthermore, selection of the process technology and the impact of n-well impurity concentration are discussed. This device showed wide tuning range in the millimetre wave range and with the low cost of the CMOS technology used, these devices appear well suited for use in millimetre-wave applications.