Self-Heating of Annealed Ti/Al/Ni/Au Contacts to Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures

被引：6
|
作者：
Sermuksnis, Emilis [1 ]
Jorudas, Justinas [2 ]
Simukovic, Artur [1 ]
Kovalevskij, Vitalij [2 ]
Kasalynas, Irmantas [2 ]
机构：
[1] Ctr Phys Sci & Technol, Fluctuat Res Lab, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania
[2] Ctr Phys Sci & Technol, Terahertz Photon Lab THz Atelier, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania
来源：
APPLIED SCIENCES-BASEL | 2022年 / 12卷 / 21期
关键词：
Gallium nitride; AlGaN; GaN; TLM; HEMT; contact resistance; 2DEG; hot electrons; microwave noise; self-heating; MICROWAVE NOISE; OHMIC CONTACTS; HEMTS; RESISTANCE; DEGRADATION; TRANSISTORS; TRANSPORT; CHANNEL; DC;
D O I：
10.3390/app122111079
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
In this work, we investigated the self-heating effects of annealed Ti/Al/Ni/Au ohmic contacts and two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructures under strong electric field by using the short pulse current-voltage and microwave noise measurement techniques. The experimental results demonstrated that the self-heating phenomena in ohmic contacts with the increase of current may dominate over the electrical performances of 2DEG channel. Moreover, the excess noise temperature of contact resistance was found to be more than four times higher than that of 2DEG channel at the same high current density values. The results reveal the importance of self-heating of the ohmic contacts on the device performance under short-duration (only 100 ns) and low-duty-cycle (only 10(-5)) pulse regime.
引用
收藏
页数：17
相关论文
共 50 条
  • [1] Two-dimensional electron gas in AlGaN/GaN heterostructures
    Li, JZ
    Lin, JY
    Jiang, HX
    Khan, MA
    Chen, Q
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (04): : 1117 - 1120
  • [2] Chemical analysis of Ti/Al/Ni/Au ohmic contacts to AlGaN/GaN heterostructures
    Macherzynski, Wojciech
    Indykiewicz, Kornelia
    Paszkiewicz, Bogdan
    [J]. OPTICA APPLICATA, 2013, 43 (01) : 67 - 72
  • [3] Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
    Protasov, D. Yu.
    Malin, T. V.
    Tikhonov, A. V.
    Tsatsulnikov, A. F.
    Zhuravlev, K. S.
    [J]. SEMICONDUCTORS, 2013, 47 (01) : 33 - 44
  • [4] Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
    D. Yu. Protasov
    T. V. Malin
    A. V. Tikhonov
    A. F. Tsatsulnikov
    K. S. Zhuravlev
    [J]. Semiconductors, 2013, 47 : 33 - 44
  • [5] The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
    JinFeng Zhang
    Yue Hao
    JinCheng Zhang
    JinYu Ni
    [J]. Science in China Series F: Information Sciences, 2008, 51 : 780 - 789
  • [6] The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
    ZHANG JinFeng
    [J]. Science China(Information Sciences), 2008, (06) : 780 - 789
  • [7] The mobility of two-dimensional electron gas in AlGaN/GaN heterostructures with varied Al content
    Zhang JinFeng
    Hao Yue
    Zhang JinCheng
    Ni JinYu
    [J]. SCIENCE IN CHINA SERIES F-INFORMATION SCIENCES, 2008, 51 (06): : 780 - 789
  • [8] Electron mobility in two-dimensional electron gas in AlGaN/GaN heterostructures and in bulk GaN
    Shur, M
    Gelmont, B
    Khan, MA
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) : 777 - 785
  • [9] Correlation between microstructure and temperature dependent electrical behavior of annealed Ti/Al/Ni/Au Ohmic contacts to AlGaN/GaN heterostructures
    Iucolano, Ferdinando
    Greco, Giuseppe
    Roccaforte, Fabrizio
    [J]. APPLIED PHYSICS LETTERS, 2013, 103 (20)
  • [10] Electronic subbands of a two-dimensional electron gas in AlGaN/GaN heterostructures
    Tsubaki, K
    Maeda, N
    Saitoh, T
    Nishida, T
    Kobayashi, N
    [J]. PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 1593 - 1594
12345