High Power (23 W) Vertical External-Cavity Surface-Emitting Laser emitting at 1180 nm

被引：4
|
作者：
Leinonen, T. [1 ]
Ranta, S. [1 ]
Tavast, M. [1 ]
Epstein, R. [2 ]
Fetzer, G. [2 ]
Sandalphon [2 ]
Van Lieu, N. [2 ]
Guina, M. [1 ]
机构：
[1] Tampere Univ Technol, Optoelect Res Ctr, POB 692, FIN-33101 Tampere, Finland
[2] Arete Assoc, Longmont, CO 80503 USA
来源：
VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASERS (VECSELS) III | 2013年 / 8606卷
关键词：
III-V semiconductors; diode pumped lasers; semiconductor lasers; quantum well lasers; surface emitting lasers; lasers and laser optics; vertical emitting lasers;
D O I：
10.1117/12.2004904
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report high power operation of a vertical external-cavity surface-emitting laser (VECSEL) operating around 1180 nm. The gain chip of the VECSEL comprises 10 strain-compensated GaInAs/GaAs quantum wells in a top-emitting configuration. A maximum output power of 23 W was achieved with a mount temperature of about 0 degrees C, and 20.5 W with the mount temperature of about 12 degrees C. By introducing a birefringent filter inside the laser cavity we demonstrate a tuning range of 67 nm. The gain chip was also used to construct a VECSEL for single-frequency operation. In this configuration, a maximum output power of about 11 W was recorded.
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页数：6
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