Perpendicular current-driven magnetization switching in free layer of magnetic tunneling junctions and MRAM

被引：7
|
作者：
Peng, ZL [1 ]
Han, XF [1 ]
Zhao, SF [1 ]
Wei, HX [1 ]
Du, GX [1 ]
Zhan, WS [1 ]
机构：
[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Natl Key Lab Magnet, Beijing 100080, Peoples R China
来源：
ACTA PHYSICA SINICA | 2006年 / 55卷 / 02期
关键词：
perpendicular current; magnetic tunneling junction (MTJ); MRAM;
D O I：
10.7498/aps.55.860
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A new method of readout and writing process driven by perpendicular current in magnetoresistantive random access memory (MRAM) based on the magnetic tunneling junction is reported, and its schematic structure and operation are described.
引用
收藏
页码：860 / 864
页数：5
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