Physics-Based Modeling of Power Converters From Finite Element Electromagnetic Field Computations

被引：25

作者：

Nejadpak, Arash ^{[1
]}

Mohammed, Osama A. ^{[1
]}

机构：

[1] Florida Int Univ, Elect & Comp Engn Dept, Energy Syst Res Lab, Miami, FL 33174 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2013年 / 49卷 / 01期

关键词：

Electromagnetic interference (EMI); electromagnetic compatibility (EMC); finite elements; high-frequency (HF) modeling; power semiconductor switches; VARIABLE-SPEED DRIVE; FREQUENCY; EMI; SIMULATION; CABLE; OVERVOLTAGE; PREDICTION;

D O I：

10.1109/TMAG.2012.2206046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a physics-based high-frequency (HF) model of switching power converters including the insulated gate bipolar transistor (IGBT) unit cells, heat sink, and connective printed circuit board (PCB) traces combined in a single electrical circuit is presented. The IGBT model includes the HF stray components superimposed on the well-known Hefner IGBT model. The HF components were calculated using a 3-D quasi-static finite element (3-D FE) analysis. The proposed complex model of the IGBT was verified both numerically and experimentally at different switching frequencies. The computed IGBT model was used in a low-high frequency model of a motor-drive system, and the common mode ground current was experimentally verified showing excellent results.

引用

页码：567 / 576

页数：10

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