Slow relaxation of magnetization in MnAs nanomagnets on GaAs(001) -: art. no. 032504

被引:12
|
作者
Takagaki, Y [1 ]
Herrmann, C [1 ]
Wiebicke, E [1 ]
Herfort, J [1 ]
Däweritz, L [1 ]
Ploog, KH [1 ]
机构
[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany
关键词
D O I
10.1063/1.2166196
中图分类号
O59 [应用物理学];
学科分类号
摘要
We demonstrate slow relaxation of the magnetization in MnAs nanoparticles fabricated from epitaxially grown films on GaAs(001). In disks having a diameter as small as 100 nm and a thickness of 50 nm, the decay of the magnetization at 27 degrees C, which is merely similar to 10 degrees C below the Curie temperature T-C, is less than 1% over a period of one day. The large uniaxial magnetocrystalline anisotropy and the abrupt loss of the ferromagnetism at T-C of MnAs are responsible for the slow relaxation. (c) 2006 American Institute of Physics.
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页码:1 / 3
页数:3
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