Study on vacancy formation in ferroelectric PbTiO3 from ab initio

被引:50
|
作者
Zhang, Z
Wu, P
Lu, L
Shu, C
机构
[1] Inst High Performance Comp, Singapore 117528, Singapore
[2] Natl Univ Singapore, Dept Mech Engn, Singapore 119260, Singapore
关键词
D O I
10.1063/1.2192623
中图分类号
O59 [应用物理学];
学科分类号
摘要
Formation energies of possible vacancies under different oxygen partial pressures were studied using an ab initio density functional theory and supercell approach. Under oxygen-rich conditions, lead vacancies are the stable ones throughout the band gap, and their ionization level locates at 0.56 eV from the top of valence band, which may contribute to p-type conduction. Under oxygen-poor conditions, oxygen vacancies are the stable ones at the top of the valence band. It is a deep donor that may not only dilute the acceptor carriers to weaken the p-type conduction but hardly contribute to n-type conduction. (c) 2006 American Institute of Physics.
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页数:3
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