Atomic Force Microscopy Local Oxidation of GeO Thin Films

被引：0
|
作者：
Astankova, K. N. [1 ]
Kozhukhov, A. S. [1 ]
Gorokhov, E. B. [1 ]
Azarov, I. A. [1 ,2 ]
Latyshev, A. V. [1 ,2 ]
机构：
[1] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia
[2] Novosibirsk State Univ, Novosibirsk 630090, Russia
来源：
SEMICONDUCTORS | 2018年 / 52卷 / 16期
基金：
俄罗斯基础研究基金会;
关键词：
NANO-OXIDATION; HUMIDITY;
D O I：
10.1134/S1063782618160030
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Metastable germanium monoxide (GeO) thin-insulating films have been investigated as a new promising material for atomic force microscope (AFM) oxidation lithography. The kinetics of GeO layer oxidation performed in the tapping mode of AFM was found to have a logarithmic relationship to oxide height versus pulse duration. Effect of humidity on oxidation of germanium monoxide thin films was studied at relative humidity 40, 60, 80%. When local anodic oxidation of GeO layer was carried out by AFM operating in the contact mode in high voltage (9 V) regime and at high relative humidity (RH = 80%), the size and shape of fabricated oxide was changed drastically.
引用
收藏
页码：2081 / 2084
页数：4
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