Testing asymmetry in plasma-ball growth seeded by a nanoscale absorbing defectembedded in a SiO2 thin-film matrix subjected to UV pulsed-laser radiation

被引：38
|
作者：
Papernov, S. [1 ]
Schmid, A. W. [1 ]
机构：
[1] Univ Rochester, Laser Energet Lab, Rochester, NY 14623 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2008年 / 104卷 / 06期
关键词：
D O I：
10.1063/1.2980054
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Previous studies of ultraviolet, nanosecond-pulsed-laser damage in thin films revealed nanoscale absorbing defects as a major source of damage initiation. It was also demonstrated that damage (crater formation) is facilitated by plasma-ball formation around absorbing defects. In this work an attempt is made to verify the symmetry of the plasma ball by irradiating SiO2 thin film with embedded gold nanoparticles from the side of either the air/film or substrate/film interfaces. Crater-formation thresholds derived in each case support preferential plasma-ball growth in the direction of the laser-beam source. The strong impact of internal E-field distribution is identified. (c) 2008 American Institute of Physics.
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页数：5
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