Stabilization of Bulk p-Type and Surface n-Type Carriers in Mg-Doped InN {0001} Films

被引：21

作者：

Song, Jung-Hwan ^{[1
]}

Akiyama, Toru ^{[2
]}

Freeman, Arthur J. ^{[1
,3
]}

机构：

[1] Northwestern Univ, Dept Phys & Astron, Evanston, IL 60208 USA

[2] Mie Univ, Dept Engn Phys, Tsu, Mie 5148507, Japan

[3] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA

来源：

PHYSICAL REVIEW LETTERS | 2008年 / 101卷 / 18期

关键词：

D O I：

10.1103/PhysRevLett.101.186801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The formation of p-type carriers in InN {0001} films by Mg doping is theoretically investigated by means of the highly precise thin film full-potential linearized augmented plane-wave method. The first-principles calculations simultaneously simulating both p-type and n-type carriers in the bulk and surface layers, respectively, demonstrate that the formation energies of a substitutional Mg atom in the surface region are lower than those in the bulk due to the compensation mechanism. The Mg is, however, stabilized in the bulk layers due to a large diffusion-barrier height, suggesting a possible mechanism for the stabilization of Mg in the bulk and the formation of p-type carriers.

引用

页数：4

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