Radiation tolerance of two-dimensional material-based devices for space applications

被引:111
|
作者
Vogl, Tobias [1 ]
Sripathy, Kabilan [1 ]
Sharma, Ankur [2 ]
Reddy, Prithvi [3 ]
Sullivan, James [4 ]
Machacek, Joshua R. [4 ]
Zhang, Linglong [2 ]
Karouta, Fouad [5 ]
Buchler, Ben C. [1 ]
Doherty, Marcus W. [3 ]
Lu, Yuerui [1 ]
Lam, Ping Koy [1 ]
机构
[1] Australian Natl Univ, Ctr Quantum Computat & Commun Technol, Dept Quantum Sci, Res Sch Phys & Engn, Acton, ACT 2601, Australia
[2] Australian Natl Univ, Res Sch Engn, Acton, ACT 2601, Australia
[3] Australian Natl Univ, Laser Phys Ctr, Res Sch Phys & Engn, Acton, ACT 2601, Australia
[4] Australian Natl Univ, Plasma Res Lab, Res Sch Phys & Engn, Canberra, ACT 2601, Australia
[5] Australian Natl Univ, Australian Natl Fabricat Facil, Res Sch Phys & Engn, Acton, ACT 2601, Australia
基金
澳大利亚研究理事会;
关键词
HEXAGONAL BORON-NITRIDE; FIELD-EFFECT TRANSISTORS; QUANTUM EMITTERS; DEFECT FORMATION; X-RAY; MOS2; IRRADIATION; PHOTOLUMINESCENCE; EMISSION; PROTON;
D O I
10.1038/s41467-019-09219-5
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Characteristic for devices based on two-dimensional materials are their low size, weight and power requirements. This makes them advantageous for use in space instrumentation, including photovoltaics, batteries, electronics, sensors and light sources for long-distance quantum communication. Here we present a comprehensive study on combined radiation effects in Earth's atmosphere on various devices based on these nanomaterials. Using theoretical modeling packages, we estimate relevant radiation levels and then expose field-effect transistors, single-photon sources and monolayers as building blocks for future electronics to gamma-rays, protons and electrons. The devices show negligible change in performance after the irradiation, suggesting robust suitability for space use. Under excessive gamma-radiation, however, monolayer WS2 shows decreased defect densities, identified by an increase in photoluminescence, carrier lifetime and a change in doping ratio proportional to the photon flux. The underlying mechanism is traced back to radiation-induced defect healing, wherein dissociated oxygen passivates sulfur vacancies.
引用
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页数:10
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