H atom surface loss kinetics in pulsed inductively coupled plasmas

被引：4
|
作者：
Jacq, S. [1 ]
Cardinaud, C. [1 ]
Le Brizoual, L. [1 ]
Granier, A. [1 ]
机构：
[1] Univ Nantes, CNRS, Inst Mat Jean Rouxel, UMR6502, F-44322 Nantes 3, France
来源：
PLASMA SOURCES SCIENCE & TECHNOLOGY | 2013年 / 22卷 / 05期
关键词：
INDUCED FLUORESCENCE; RECOMBINATION; DENSITY; PROBE; GAS;
D O I：
10.1088/0963-0252/22/5/055004
中图分类号：
O35 [流体力学]; O53 [等离子体物理学];
学科分类号：
070204 ; 080103 ; 080704 ;
摘要：
Pulsed plasmas are very powerful tools to investigate mechanisms. This paper is focused on H atom kinetics in low-pressure high-density inductively coupled pulsed plasmas. We explore pure H-2, H-2/N-2, CH4/H-2 and CH4/N-2 mixtures. These gas mixtures offer two very different kinds of wall conditions, which are stainless-steel and hydrocarbon-coated walls. It shows that H loss probability (beta) is sensitive to wall conditions. Efforts are made to understand beta evolutions with the different parameters. The effect of pressure in non-depositing plasmas is also investigated. Evolution of H atom surface loss probability is linked to ion flux measurements. Ion bombardment promotes H surface loss.
引用
收藏
页数：9
相关论文
共 50 条
  • [1] H atom surface loss kinetics in pulsed inductively coupled plasmas
    [J]. 1600, IOP Publishing Ltd (22):
  • [2] Kinetics of etching in inductively coupled plasmas
    Kim, MT
    [J]. APPLIED SURFACE SCIENCE, 2004, 228 (1-4) : 245 - 256
  • [3] Power matching to pulsed inductively coupled plasmas
    Qu, Chenhui
    Lanham, Steven J.
    Shannon, Steven C.
    Nam, Sang Ki
    Kushner, Mark J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2020, 127 (13)
  • [4] F-atom kinetics in SF6/Ar inductively coupled plasmas
    Yang, Wei
    Zhao, Shu-Xia
    Wen, De-Qi
    Liu, Wei
    Liu, Yong-Xin
    Li, Xue-Chun
    Wang, You-Nian
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2016, 34 (03):
  • [5] Surface characterization of hydrophobic thin films deposited by inductively coupled and pulsed plasmas
    Kim, Youngsoo
    Lee, Ji-Hye
    Kim, Kang-Jin
    Lee, Yeonhee
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2009, 27 (04): : 900 - 906
  • [6] Recouping etch rates in pulsed inductively coupled plasmas
    Agarwal, Ankur
    Stout, Phillip J.
    Banna, Samer
    Rauf, Shahid
    Collins, Ken
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2011, 29 (01):
  • [7] Metastable chlorine ion kinetics in inductively coupled plasmas
    Hebner, GA
    Fleddermann, CB
    Miller, PA
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (05): : 2698 - 2708
  • [8] Hydrogen atom kinetics in capacitively coupled plasmas
    Nunomura, Shota
    Katayama, Hirotaka
    Yoshida, Isao
    [J]. PLASMA SOURCES SCIENCE & TECHNOLOGY, 2017, 26 (05):
  • [9] Pulsed inductively coupled chlorine plasmas in the presence of a substrate bias
    Subramonium, P
    Kushner, MJ
    [J]. APPLIED PHYSICS LETTERS, 2001, 79 (14) : 2145 - 2147
  • [10] Growth precursors for a-C:H film deposition in pulsed inductively coupled methane plasmas
    Bauer, M.
    Schwarz-Selinger, T.
    Jacob, W.
    Von Keudell, A.
    [J]. Journal of Applied Physics, 2005, 98 (07):
12345