Strong-field-induced attosecond dynamics in SiO2

被引：0
|
作者：
Schultze, M. [1 ,3 ]
Bothschafter, E. M. [1 ,4 ]
Sommer, A. [4 ]
Holzner, S. [3 ]
Fiess, M. [1 ]
Hofstetter, M. [1 ]
Kienberger, R. [1 ,4 ]
Apalkov, V. [2 ]
Yakovlev, V. S. [1 ,3 ]
Stockman, M. I.
Krausz, F. [1 ,3 ]
机构：
[1] Max Planck Inst Quantum Opt, Hans Kopfermann Str 1, D-85748 Garching, Germany
[2] Georgia State Univ, Dept Phys, Atlanta, GA 30340 USA
[3] Univ Munich, Fac Phys, D-80539 Munich, Germany
[4] Tech Univ Munich, Dept Phys, D-85748 Garching, Germany
来源：
XVIIITH INTERNATIONAL CONFERENCE ON ULTRAFAST PHENOMENA | 2013年 / 41卷
关键词：
D O I：
10.1051/epjconf/20134102014
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Striking field-induced changes in the absorption near the Si L-edge of SiO2 exposed to a near-infrared laser field of several V/angstrom delivered by a few-cycle pulse are observed with sub-100 attosecond extreme ultraviolet pulses by means of attosecond transient absorption.
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页数：3
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