Phenyl-Naphthyl Amine Effect of New Phenothiazine Derivatives with High Tg for Hole Injection and Hole Transporting Materials

被引：8
|
作者：
Kim, Soo-Kang [1 ]
Lee, Ji-Hoon [2 ]
Park, Jong-Wook [1 ]
机构：
[1] Catholic Univ Korea, Dept Chem, Puchon 420743, South Korea
[2] Chungju Natl Univ, Dept Polymer Sci & Engn, Chungju 380702, South Korea
来源：
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2008年 / 8卷 / 10期
关键词：
OLED; Hole-Transporting; Phenothiazine; Glass-Transition Temperature (T-g); Electroluminescence;
D O I：
10.1166/jnn.2008.1015
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
We synthesized a new HIL and HTL materials by using phenothiazinly moiety, 1,4-diphenothiazyl-benzene [DPtzB], 3',7',3 '',7 ''-tetrakis(N-phenyl-2-naphthylamine)-1,4-diphenothiazyl-benzene [PNA-DPtzB]. Synthesized materials exhibited high T-g in the range of 175-202 degrees C. These values are much better than commonly used hole transporting materials (2-TNATA and NPB). The OLED device that used DPtzB as a HIL showed the highest efficiency of 4.31 cd/A at 10 mA/cm(2).
引用
收藏
页码：5247 / 5251
页数：5
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