Extraction of Front and Buried Oxide Interface Trap Densities in Fully Depleted Silicon-On-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor

被引：7
|
作者：
Cheng, Jen-Yuan [1 ]
Yeung, Chun Wing [1 ]
Hu, Chenming [1 ]
机构：
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源：
ECS SOLID STATE LETTERS | 2013年 / 2卷 / 05期
关键词：
SUBTHRESHOLD SLOPE; SOI;
D O I：
10.1149/2.001305ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this letter, a method is proposed and demonstrated for the first time to characterize and decouple the interface traps of both the front- and back channels of fully-depleted silicon-on-insulator (FD-SOI) metal-oxide-semiconductor field-effect transistor (MOSFET). We report the procedure and the underlying theory that allows the extraction of the energy profiles of the densities of the interface traps (D-it). This technique will be very useful for evaluating the interface qualities of future FD-SOI transistors. (C) 2013 The Electrochemical Society. All rights reserved.
引用
收藏
页码：Q32 / Q34
页数：3
相关论文
共 50 条
  • [1] A novel fully depleted air AlN silicon-on-insulator metal-oxide-semiconductor field effect transistor
    Yang Yuan
    Gao Yong
    Gong Peng-Liang
    [J]. CHINESE PHYSICS LETTERS, 2008, 25 (08) : 3048 - 3051
  • [2] Effects of buried oxide stress on thin-film silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Lee, JW
    Nam, MH
    Oh, JH
    Yang, JW
    Lee, WC
    Kim, HK
    Oh, MR
    Koh, YH
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (06) : 677 - 679
  • [3] Quantum transport in a nanosize silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Croitoru, MD
    Gladilin, VN
    Fomin, VM
    Devreese, JT
    Magnus, W
    Schoenmaker, W
    Sorée, B
    [J]. JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) : 1230 - 1240
  • [4] Effects of buried oxide on electrical performance of thin-film silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Lee, JW
    Oh, MR
    Koh, YH
    [J]. JOURNAL OF APPLIED PHYSICS, 1999, 85 (07) : 3912 - 3915
  • [5] Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Peng Chao
    En Yun-Fei
    Li Bin
    Lei Zhi-Feng
    Zhang Zhan-Gang
    He Yu-Juan
    Huang Yun
    [J]. ACTA PHYSICA SINICA, 2018, 67 (21)
  • [6] Comprehensive analysis of low-frequency noise variability components in bulk and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistor
    Maekawa, Keiichi
    Makiyama, Hideki
    Yamamoto, Yoshiki
    Hasegawa, Takumi
    Okanishi, Shinobu
    Sonoda, Kenichiro
    Shinkawata, Hiroki
    Yamashita, Tomohiro
    Kamohara, Shiro
    Yamaguchi, Yasuo
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2018, 57 (04)
  • [7] Effect of buried oxide thickness in a thin-film silicon on insulator power metal-oxide-semiconductor field-effect transistor
    Matsumoto, S
    Yachi, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (6A): : 3438 - 3442
  • [8] Single-Photon Detection by a Simple Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistor
    Du, Wei
    Inokawa, Hiroshi
    Satoh, Hiroaki
    Ono, Atsushi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2012, 51 (06)
  • [9] Origin of the front-back-gate coupling in partially depleted and fully depleted silicon-on-insulator metal-oxide-semiconductor field-effect transistors with accumulated back gate
    Lukyanchikova, N
    Garbar, N
    Smolanka, A
    Lokshin, M
    Simoen, E
    Claeys, C
    [J]. JOURNAL OF APPLIED PHYSICS, 2005, 98 (11)
  • [10] Limitations on threshold adjustment by backgating in fully depleted silicon-on-insulator metal-oxide-semiconductor field effect transistors
    Tarr, NG
    Wang, Y
    Soreefan, R
    Snelgrove, WM
    Manning, BM
    Bazarjani, S
    MacElwee, TW
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1998, 16 (02): : 838 - 842
12345