Grain-size effect on the electrical properties of nanocrystalline indium tin oxide thin films

被引：35
|
作者：
Lee, Jong Hoon [1 ]
Kim, Young Heon [1 ,2 ]
Ahn, Sang Jung [1 ,2 ]
Ha, Tae Hwan [2 ,3 ]
Kim, Hong Seung [4 ]
机构：
[1] Korea Res Inst Stand & Sci, Taejon 305340, South Korea
[2] Univ Sci & Technol, Taejon 305350, South Korea
[3] Korea Res Inst Biosci & Biotechnol, Future Biotechnol Res Div, Taejon 305806, South Korea
[4] Korea Maritime & Ocean Univ, Dept Nano Semicond Engn, Busan 606791, South Korea
来源：
MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2015年 / 199卷
关键词：
Nanocrystalline; Indium tin oxide (ITO); Grain size effect; Transmission electron microscopy; SPIN-COATING PROCESS; SOL-GEL TECHNIQUE; SCATTERING MECHANISMS; OPTICAL-PROPERTIES; TEMPERATURE; TRANSPARENT; DEPOSITION; BOUNDARY; INK;
D O I：
10.1016/j.mseb.2015.04.011
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this paper, we demonstrate the electrical properties, depending on grain size, of nanocrystalline indium tin oxide (ITO) thin films prepared with a solution process. The size distributions of nanometer-sized ITO film grains increased as the post-annealing temperature increased after deposition; the grain sizes were comparable with the calculated electron mean free path. The mobility of ITO thin films increased with increasing grain size; this phenomenon was explained by adopting the charge-trapping model for grain boundary scattering. These findings suggest that it is possible to improve mobility by reducing the number of trapping sites at the grain boundary. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码：37 / 41
页数：5
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