Inverse spin Hall effect induced by linearly polarized light in the topological insulator Bi2Se3

被引：7
|
作者：
Yu, Jinling [1 ]
Zeng, Xiaolin [1 ]
Zhang, Liguo [2 ]
Yin, Chunming [3 ,4 ]
Chen, Yonghai [5 ,6 ]
Liu, Yu [5 ]
Cheng, Shuying [1 ,7 ]
Lai, Yunfeng [1 ]
He, Ke [2 ]
Xue, Qikun [2 ]
机构：
[1] Fuzhou Univ, Inst Micro Nano Devices & Solar Cells, Sch Phys & Informat Engn, Fuzhou, Fujian, Peoples R China
[2] Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
[3] Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
[4] Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Dept Modern Phys, CAS Key Lab Microscale Magnet Resonance, Hefei 230026, Anhui, Peoples R China
[5] Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
[6] Univ Chinese Acad Sci, Coll Mat Sci & Optoelect Technol, Beijing 100049, Peoples R China
[7] Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolta Sci & E, Changzhou 213164, Jiangsu, Peoples R China
来源：
OPTICS EXPRESS | 2018年 / 26卷 / 04期
基金：
中国国家自然科学基金;
关键词：
SURFACE; PHOTOCURRENTS; EMITTERS;
D O I：
10.1364/OE.26.004832
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
The inverse spin Hall effect (ISHE) induced by the normal incidence of linearly-polarized infrared radiation has been observed in the topological insulator Bi2Se3. A model has been proposed to explain the phenomenon, and the spin transverse force has been determined by the model fitting. The anomalous linear photogalvanic effect (ALPGE) is also observed, and the photoinduced momentum anisotropy is extracted. Furthermore, the ISHE and ALPGE are investigated at different temperatures between 77 and 300 K, and the temperature dependence of the spin transverse force and photoinduced momentum anisotropy are obtained. This study suggests a new way to investigate the inverse spin Hall effect via linearly polarized light even at room temperature. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement
引用
收藏
页码：4832 / 4841
页数：10
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