Collision-induced electronic transitions from the N-2 a(1)Pi(g)(v=1 and 2) levels

被引:12
|
作者
Katayama, DH
Dentamaro, AV
Welsh, JA
机构
[1] Phillips Laboratory (GPID), Hanscom AFB, MA 01731-3010
[2] Orion International Technologies, Inc., Albuquerque, NM 87110, 6501 Americas Parkway, NE
来源
JOURNAL OF PHYSICAL CHEMISTRY | 1996年 / 100卷 / 19期
关键词
D O I
10.1021/jp953040b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have used a double-resonance-enhanced multiphoton ionization (REMPI) technique to determine the quenching rates for collision-induced electronic transitions (CIETs) from the N-2 a(1) Pi(g)(upsilon = 1) level as a function of the collision partners He, Ar, and nitrogen. The branching ratio from this level to the a'(1) Sigma(u)(-)(upsilon = 2 and 1) levels is determined experimentally and found to be in excellent agreement with an empirical model developed previously. This ratio is used to determine state-specific CIET rates from pressure-dependent radiative decay curves using a double-exponential model for collisional deactivation. The rates are determined for each of the collision partners, and the most efficient quenchant is determined to be nitrogen followed by Ar and He. In addition, the propensities for CIET have been observed from the a(1) Pi(g)(upsilon = 2) level to the a'(1) Sigma(u)(-)(upsilon = 3) level as a function of the rare-gas partners. There is a dependence of the propensities on the collision partner, and helium has a smaller Delta J propensity than Ar.
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页码:7854 / 7858
页数:5
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