Trivalent gallium ion conduction in NASICON-type solid

被引：5
|
作者：
Tamura, Shinji [1 ]
Araki, Ken-ichiro [1 ]
Imanaka, Nobuhito [1 ]
机构：
[1] Osaka Univ, Dept Appl Chem, 2-1 Yamadaoka, Suita, Osaka 5650871, Japan
来源：
JOURNAL OF ASIAN CERAMIC SOCIETIES | 2016年 / 4卷 / 04期
基金：
日本学术振兴会;
关键词：
Ion conduction; Trivalent Ga3+ ion; NASICON-type solid; Three-dimensional network;
D O I：
10.1016/j.jascer.2016.08.002
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
A new trivalent gallium (Ga3+) ion conducting solid was successfully developed by selecting the three dimensionally well-ordered NASICON-type structure. Although Ga is accepted as a species whose covalency is so high that trivalent Ga3+ ion is inappropriate ionic species in solids to migrate due to its strong bonding with surrounding ions such as oxide anion, we demonstrated the trivalent Ga3+ ion conduction in the NASICON-type(GaxTi1-x)(4/(4-x))Nb(PO4)(3) solids by strictly selecting the constituent cations. Among the samples prepared, (Ga0.1Ti0.9)(40/39)Nb(PO4)(3) showed the highest Ga3+ ion conductivity of 5.1 x 10(-5) S cm(-1) at 600 degrees C. (C) 2016 The Ceramic Society of Japan and the Korean Ceramic Society. Production and hosting by Elsevier B.V.
引用
收藏
页码：390 / 393
页数：4
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