Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition

被引：14

作者：

Cecchi, S. ^{[1
]}

Etzelstorfer, T. ^{[2
]}

Mueller, E. ^{[3
]}

Samarelli, A. ^{[4
]}

Llin, L. Ferre ^{[4
]}

Chrastina, D. ^{[1
]}

Isella, G. ^{[1
]}

Stangl, J. ^{[2
]}

Weaver, J. M. R. ^{[4
]}

Dobson, P. ^{[4
]}

Paul, D. J. ^{[4
]}

机构：

[1] L NESS Politecn Milano, I-22100 Como, Italy

[2] Johannes Kepler Univ Linz, Inst Semicond & Solid State Phys, A-4040 Linz, Austria

[3] Electron Microscopy ETH Zurich EMEZ, CH-8093 Zurich, Switzerland

[4] Univ Glasgow, Sch Engn, Glasgow G12 8LT, Lanark, Scotland

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2013年 / 42卷 / 07期

关键词：

Silicon germanium; multiple quantum well; thermoelectrics; MERIT;

D O I：

10.1007/s11664-013-2511-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ge/SiGe multiple quantum wells are presented as efficient material for room-temperature thermoelectric generators monolithically integrated onto silicon. We have deposited and characterized 10-mu m-thick heterostructures engineered for lateral devices, in which both heat and current flow parallel to the multilayer. In this paper we investigate in detail the structural and interface quality by means of x-ray diffraction and transmission electron microscopy. Thermoelectric measurements, giving a figure of merit of 0.04 to 0.08, together with mobility spectra and defect analysis suggest possibilities of even higher efficiency. Nevertheless, the high power factor of 2 mW/K(2)m to 6 mW/K(2)m is promising for applications.

引用

页码：2030 / 2034

页数：5

共 50 条

[1] Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition
S. Cecchi
T. Etzelstorfer
E. Müller
A. Samarelli
L. Ferre Llin
D. Chrastina
G. Isella
J. Stangl
J. M. R. Weaver
P. Dobson
D. J. Paul
[J]. Journal of Electronic Materials, 2013, 42 : 2030 - 2034
[2] Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
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[3] Si/SiGe growth by low-energy plasma-enhanced chemical vapor deposition
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[6] Structural characterization of thick, high-quality epitaxial Ge on Si substrates grown by low-energy plasma-enhanced chemical vapor deposition
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[8] Low-energy plasma enhanced chemical vapor deposition
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[10] Ge/SiGe superlattices for thermoelectric energy conversion devices
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Tanja Etzelstorfer
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Lourdes Ferre Llin
Daniel Chrastina
Giovanni Isella
Julian Stangl
Douglas J. Paul
[J]. Journal of Materials Science, 2013, 48 : 2829 - 2835

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