Chemical-looping Combustion of Coal-derived Synthesis Gas Over Copper Oxide Oxygen Carriers

被引:55
|
作者
Tian, Hanjing [1 ,2 ]
Chaudhari, Karuna [1 ,2 ]
Simonyi, Thomas [1 ,2 ]
Poston, James [1 ]
Liu, Tengfei [3 ]
Sanders, Tom [3 ]
Veser, Goetz [3 ]
Siriwardane, Ranjani [1 ]
机构
[1] US DOE, Natl Energy Technol Lab, Morgantown, WV 26507 USA
[2] Parsons, Pittsburgh, PA 15129 USA
[3] Univ Pittsburgh, Dept Chem Engn, Pittsburgh, PA 15261 USA
关键词
D O I
10.1021/ef800438x
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
CuO/bentonite and CuO-BHA nanocomposites were studied as oxygen carriers in chemical-looping combustion (CLC) of simulated synthesis gas. Global reaction rates of reduction and oxidation, as the function of reaction conversion, were calculated from 10-cycle oxidation/reduction tests utilizing thermogravimetric analysis at atmospheric pressure between 700 and 900 degrees C. It was found that the reduction reactions are always faster than oxidation reactions; reaction temperature and particle size do not significantly affect the reaction performance of CuO/bentonite. Multicycle CLC tests conducted in a high-pressure flow reactor showed stable reactivity for production of CO2 from fuel gas at 800 and 900 degrees C and full consumption of hydrogen during the reaction. Results of the tapered element oscillating microbalance showed a negative effect of pressure on the global rates of reduction-oxidation reactions at higher fractional conversions. X-ray diffraction patterns confirmed the presence of CuO in the bulk phase of the oxidized sample. Electron microanalysis showed significant morphology changes of reacted CuO/bentonite samples after the 10 oxidation-reduction cycles above 700 degrees C in an atmospheric thermogravimetric analyzer. The nanostructured CuO-BHA carrier also showed excellent stability and, in comparison to the CuO/bentonite system, slightly accelerated redox kinetics albeit at the expense of significantly increased complexity of manufacturing. Overall, both types of CuO carriers exhibited excellent reaction performance and thermal stability for the CLC process at 700-900 degrees C.
引用
收藏
页码:3744 / 3755
页数:12
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