Silicon-based single electron transistor fabricated by direct electron beam irradiation

被引：0
|
作者：
Park, KS [1 ]
Yoo, KH
Kim, J
Choi, JB
机构：
[1] Korea Res Inst Stand & Sci, Elect Device Grp, Taejon 305600, South Korea
[2] Chungbuk Natl Univ, Dept Phys, Cheongju 360753, South Korea
来源：
JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2001年 / 39卷
关键词：
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We have developed a new technique using direct electron beam irradiation for the fabrication of silicon-based single electron transistors based on the traditional mietal-oxide-semiconductor-field-effect structures. Using this technique, more than 10 devices have been fabricated and clear Coulomb oscillations are observed in most of samples. The period of Coulomb oscillations depends on the size of dot that is formed between two potential barriers induced by direct electron beam irradiation.
引用
收藏
页码：S173 / S175
页数：3
相关论文
共 50 条
  • [1] Silicon-based single-electron memory using a multiple-tunnel junction fabricated by electron-beam direct writing
    Dutta, A
    Lee, SP
    Hatatani, S
    Oda, S
    APPLIED PHYSICS LETTERS, 1999, 75 (10) : 1422 - 1424
  • [2] Silicon-based single-electron-tunneling transistor operated at 4.2 K
    Toshiba Corp, Kawasaki, Japan
    Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes & Review Papers, 1995, 34 (8 B): : 4485 - 4487
  • [3] Room temperature operated single electron transistor fabricated by electron beam nanolithography
    Kurihara, K
    Namatsu, H
    Nagase, M
    Makino, T
    MICROELECTRONIC ENGINEERING, 1997, 35 (1-4) : 261 - 264
  • [4] Titanium single-electron transistor fabricated by electron-beam lithography
    Sillanpää, MA
    Hakonen, PJ
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2002, 15 (01): : 41 - 47
  • [5] SILICON-BASED SINGLE-ELECTRON-TUNNELING TRANSISTOR OPERATED AT 4.2-K
    OHATA, A
    NIIYAMA, H
    SHIBATA, T
    NAKAJIMA, K
    TORIUMI, A
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (8B): : 4485 - 4487
  • [6] Silicon single-electron transistor fabricated by anisotropic etch and oxidation
    Pennelli, G
    Piotto, M
    Barillaro, G
    MICROELECTRONIC ENGINEERING, 2006, 83 (4-9) : 1710 - 1713
  • [7] Microwave resonances in silicon-based single electron transistors
    Creswell, L. A.
    Hasko, D. G.
    Williams, D. A.
    MICROELECTRONIC ENGINEERING, 2007, 84 (5-8) : 1614 - 1617
  • [8] Single electron transistor fabricated on heavily doped silicon-on-insulator substrate
    Manninen, A
    Kauranen, J
    Pekola, J
    Savin, A
    Kamp, M
    Emmerling, M
    Forchel, A
    Prunnila, M
    Ahopelto, J
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (3B): : 2013 - 2016
  • [9] Single electron transistor fabricated with SOI wafer
    Kobayashi, S.
    Imaeda, M.
    Matsumoto, S.
    MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2006, 26 (5-7): : 889 - 892
  • [10] Thermooptic interferometric switches fabricated by electron beam irradiation of silica-on-silicon
    Syahriar, A
    Syms, RRA
    Tate, TJ
    JOURNAL OF LIGHTWAVE TECHNOLOGY, 1998, 16 (05) : 841 - 846
12345