Substrate orientation dependent fine structure splitting of symmetric In(Ga)As/GaAs quantum dots

被引：26
|
作者：
Treu, J. [1 ]
Schneider, C.
Huggenberger, A.
Braun, T.
Reitzenstein, S.
Hoefling, S.
Kamp, M.
机构：
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 02期
关键词：
ENTANGLED PHOTONS;
D O I：
10.1063/1.4733664
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present a comparative investigation of the fine structure splitting (FSS) from self-organized In(Ga)As quantum dots (QDs) grown on GaAs substrates with different lattice orientations. QDs grown on (111) B-and (112) oriented substrates are analyzed and compared to small QDs on commonly used (001) substrates. Mean values for the FSS as low as (5.6 +/- 0.6) mu eV are obtained for QDs on (111) B-GaAs, comparing favorably to the other two approaches ((11.8 +/- 1.7) mu eV for (112)-surfaces and (14.0 +/- 2.2) mu eV for (001)-surfaces). Single photon emission from (111) B QDs grown by droplet epitaxy is demonstrated via photon autocorrelation studies with a g((2))(0) value of 0.07. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733664]
引用
收藏
页数：4
相关论文
共 50 条
  • [1] Ultra-small excitonic fine structure splitting in highly symmetric quantum dots on GaAs (001) substrate
    Huo, Y. H.
    Rastelli, A.
    Schmidt, O. G.
    [J]. APPLIED PHYSICS LETTERS, 2013, 102 (15)
  • [2] Influence of substrate orientation on exciton fine structure splitting of InAs/InP nanowire quantum dots
    Michał Zieliński
    [J]. Nanoscale Research Letters, 7
  • [3] Influence of substrate orientation on exciton fine structure splitting of InAs/InP nanowire quantum dots
    Zielinski, Michal
    [J]. NANOSCALE RESEARCH LETTERS, 2012, 7
  • [4] Fine structure splitting in the optical spectra of single GaAs quantum dots
    Gammon, D
    Snow, ES
    Shanabrook, BV
    Katzer, DS
    Park, D
    [J]. PHYSICAL REVIEW LETTERS, 1996, 76 (16) : 3005 - 3008
  • [5] Self-Assembly of Symmetric GaAs Quantum Dots on (111)A Substrates: Suppression of Fine-Structure Splitting
    Mano, Takaaki
    Abbarchi, Marco
    Kuroda, Takashi
    McSkimming, Brian
    Ohtake, Akihiro
    Mitsuishi, Kazutaka
    Sakoda, Kazuaki
    [J]. APPLIED PHYSICS EXPRESS, 2010, 3 (06)
  • [6] Temperature-dependent fine structure splitting in InGaN quantum dots
    Wang, Tong
    Puchtler, Tim J.
    Zhu, Tongtong
    Jarman, John C.
    Kocher, Claudius C.
    Oliver, Rachel A.
    Taylor, Robert A.
    [J]. APPLIED PHYSICS LETTERS, 2017, 111 (05)
  • [7] Correlation between exciton polarized lifetime and fine structure splitting in InAs/GaAs quantum dots
    Chen, Hao
    Zhuo, Zhiyao
    Huang, Junhui
    Dou, Xiuming
    He, Xiaowu
    Ding, Kun
    Ni, Haiqiao
    Niu, Zhichuan
    Jiang, Desheng
    Sun, Baoquan
    [J]. APPLIED PHYSICS LETTERS, 2020, 116 (08)
  • [8] Fine structure splitting reduction in droplet epitaxy GaAs quantum dots grown on (111) A surface
    Abbarchi, M.
    Kuroda, T.
    Mano, T.
    Sakoda, K.
    [J]. QUANTUM DOTS 2010, 2010, 245
  • [9] Strain-driven growth of GaAs(111) quantum dots with low fine structure splitting
    Yerino, Christopher D.
    Simmonds, Paul J.
    Liang, Baolai
    Jung, Daehwan
    Schneider, Christian
    Unsleber, Sebastian
    Vo, Minh
    Huffaker, Diana L.
    Hoefling, Sven
    Kamp, Martin
    Lee, Minjoo Larry
    [J]. APPLIED PHYSICS LETTERS, 2014, 105 (25)
  • [10] Inversion of the exciton fine structure splitting in quantum dots
    Young, R. J.
    Stevenson, R. M.
    Shields, A. J.
    Atkinson, P.
    Cooper, K.
    Ritchie, D. A.
    Groom, K. M.
    Tartakovskii, A. I.
    Skolnick, M. S.
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 32 (1-2): : 97 - 100
12345