The effect of stress on the dielectric and tunable properties of barium stannate titanate thin films

被引：26

作者：

Song, Sannian ^{[1
]}

Zhai, Jiwei ^{[1
]}

Gao, Lina ^{[1
]}

Yao, Xi ^{[1
]}

机构：

[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 05期

关键词：

aluminium compounds; barium compounds; buffer layers; crystal structure; dielectric polarisation; ferroelectric thin films; ferroelectric transitions; grain size; lanthanum compounds; magnesium compounds; permittivity; piezoelectricity; strontium compounds; tensile strength; SOL-GEL PROCESS; THERMAL STRAIN; TEMPERATURE;

D O I：

10.1063/1.3073743

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ba(Sn(0.15)Ti(0.85))O(3) thin films were grown on the LaNiO(3) buffered LaAlO(3), SrTiO(3), MgO, and Al(2)O(3) single crystal substrates, respectively. These substrates provide a systematic change in the stress while maintaining the same film microstructure. The stress in the thin film induces an obvious change in the dielectric behavior. The reduction in the ferroelectric transition temperature with increasing biaxial tensile stress is attributed to the suppression of in-plane polarization due to the small lateral grain size in the films. The in-plane tensile stress in this study reduces the unit cell along electric field in the parallel plate capacitor structure and decreases the tunability.

引用

页数：3

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