A simple method of extracting the polarization charge density in the AlGaN/GaN heterostructure from current-voltage and capacitance-voltage characteristics

被引：4

作者：

Lu Yuan-Jie ^{[1
]}

Lin Zhao-Jun ^{[1
]}

Yu Ying-Xia ^{[1
]}

Meng Ling-Guo ^{[1
]}

Cao Zhi-Fang ^{[1
]}

Luan Chong-Biao ^{[1
]}

Wang Zhan-Guo ^{[2
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

[2] Chinese Acad Sci, Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS B | 2012年 / 21卷 / 09期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN heterostructures; flat-band voltage; polarization charge density; PIEZOELECTRIC POLARIZATION;

D O I：

10.1088/1674-1056/21/9/097104

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

An Ni Schottky contact on the AlGaN/GaN heterostructure is fabricated. The flat-band voltage for the Schottky contact on the AlGaN/GaN heterostructure is obtained from the forward current voltage characteristics. With the measured capacitance voltage curve and the flat-band voltage, the polarization charge density in the AlGaN/GaN heterostructure is investigated, and a simple formula for calculating the polarization charge density is obtained and analyzed. With the approach described in this paper, the obtained polarization charge density agrees well with the one calculated by self-consistently solving Schrodinger's and Poisson's equations.

引用

页数：4

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