INFLUENCE OF RAPID THERMAL TREATMENT OF INITIAL SILICON WAFERS ON THE ELECTROPHYSICAL PROPERTIES OF SILICON DIOXIDE OBTAINED BY PYROGENOUS OXIDATION

被引：1

作者：

Pilipenko, Vladimir ^{[1
]}

Solodukha, Vitaly ^{[1
]}

Zharin, Anatoly ^{[2
]}

Gusev, Oleg ^{[2
]}

Vorobey, Roman ^{[2
]}

Pantsialeyeu, Kanstantsin ^{[2
]}

Tyavlovsky, Andrei ^{[2
]}

Tyavlovsky, Konstantin ^{[2
]}

Bondariev, Vitalii ^{[3
]}

机构：

[1] JSC INTEGRAL Holding Management Co, 121A Kazinets Str, Minsk 220108, BELARUS

[2] Belarussian Natl Tech Univ, Minsk, BELARUS

[3] Lublin Univ Technol, Dept Elect Devices & High Voltage Technol, Lublin, Poland

来源：

HIGH TEMPERATURE MATERIAL PROCESSES | 2019年 / 23卷 / 03期

关键词：

silicon dioxide; pyrogenous oxidation; thermal treatment; Volt-farad characteristics; scanning Kelvin probe;

D O I：

10.1615/HighTempMatProc.2019031122

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

For investigation of the influence exerted by rapid thermal treatment of initial silicon wafers on the electrophysical properties of silicon dioxide obtained by means of the pyrogenous oxidation the analysis methods of volt-farad characteristics and the scanning probe electrometry were used. The obtained results demonstrate reduction of both stress of the flat zones and the charge density on the silicon-silicon dioxide boundary on the wafers, which were subjected to rapid thermal treatment. The alterations of the surface potential on the wafer area registered by means of the method of scanning probe electrometry correspond to the diminishing operation of the electrons, leaving the surface and serve as justification of the assertion that the properties of the silicon-silicon dioxide boundary improve after rapid thermal treatment of initial silicon wafers owing to the substantial enhancement of the homogeneity of microstructure of the surface layer of silicon dioxide.

引用

页码：283 / 290

页数：8

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