Influence of Series Resistance and Interface State Density on Electrical Characteristics of Ru/Ni/n-GaN Schottky structure

被引：15

作者：

Reddy, M. Siva Pratap ^{[1
,2
]}

Kwon, Mi-Kyung ^{[2
]}

Kang, Hee-Sung ^{[2
]}

Kim, Dong-Seok ^{[2
]}

Lee, Jung-Hee ^{[2
]}

Reddy, V. Rajagopal ^{[3
]}

Jang, Ja-Soon ^{[1
]}

机构：

[1] Yeungnam Univ, LED IT Fus Technol Res Ctr LIFTRC, Gyongsan 712749, South Korea

[2] Kyungpook Natl Univ, Sch Elect Engn & Comp Sci, Taegu 702701, South Korea

[3] Sri Venkateswara Univ, Dept Phys, Tirupati 517502, Andhra Pradesh, India

来源：

JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | 2013年 / 13卷 / 05期

基金：

新加坡国家研究基金会;

关键词：

Ru/Ni/n-GaN; series resistance; interface state density; Terman's method; CURRENT-VOLTAGE CHARACTERISTICS; ENERGY-DISTRIBUTION; DIODES; CAPACITANCE; CONTACTS;

D O I：

10.5573/JSTS.2013.13.5.492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated the electrical properties of Ru/Ni/n-GaN Schottky structure using current-voltage (I-V) and capacitance-voltage (C-V) measurements at room temperature. The barrier height (Phi(bo)) and ideality factor (n) of Ru/Ni/n-GaN Schottky structure are found to be 0.66 eV and 1.44, respectively. The Phi(bo) and the series resistance (R-S) obtained from Cheung's method are compared with modified Norde's method, and it is seen that there is a good agreement with each other. The energy distribution of interface state density (N-SS) is determined from the I-V measurements by taking into account the bias dependence of the effective barrier height. Further, the interface state density N-SS as determined by Terman's method is found to be 2.14x10(12) cm(-2) eV(-1) for the Ru/Ni/n-GaN diode. Results show that the interface state density and series resistance has a significant effect on the electrical characteristics of studied diode.

引用

页码：492 / 499

页数：8

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