Epitaxial Growth and Transport Properties of High-Mobility ZnO-Based Heterostructures

被引:0
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作者
Tsukazaki, A. [1 ]
Ohtomo, A. [1 ]
Kawasaki, M. [1 ]
机构
[1] Tohoku Univ, Inst Mat Res, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
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X [环境科学、安全科学];
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08 ; 0830 ;
摘要
Optimization of growth conditions is most important for extracting desired material properties, but it always requires time-consuming experiments. The temperature gradient method was applied for high-throughput optimization of the growth temperature by pulsed laser deposition to ZnO-based heterostructures. Surface morphology, photoluminescence, and electrical transport properties depend systematically on the growth temperature. Consequently, enhancement of two-dimensional growth, as detected from atomic force microscope images, can elucidate good physical properties, e.g., the observation of higher-order exciton emissions and highest electron mobility. By further optimizing the structure of heterojunction, we found growth conditions enabling the quantum Hall effect at the ZnO/MgxZn1-xO heterointerface.
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页码:77 / +
页数:3
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