Chiral transport along magnetic domain walls in the quantum anomalous Hall effect

被引:39
|
作者
Rosen, Ilan T. [1 ,2 ]
Fox, Eli J. [2 ,3 ]
Kou, Xufeng [4 ,5 ]
Pan, Lei [4 ]
Wang, Kang L. [4 ]
Goldhaber-Gordon, David [2 ,3 ]
机构
[1] Stanford Univ, Dept Appl Phys, Stanford, CA 94305 USA
[2] Stanford Inst Mat & Energy Sci, SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA
[3] Stanford Univ, Dept Phys, Stanford, CA 94305 USA
[4] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA
[5] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China
基金
美国国家科学基金会;
关键词
FERROMAGNETIC TOPOLOGICAL INSULATOR; STATE;
D O I
10.1038/s41535-017-0073-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The quantum anomalous Hall effect in thin film magnetic topological insulators (MTIs) is characterized by chiral, one-dimensional conduction along the film edges when the sample is uniformly magnetized. This has been experimentally confirmed by measurements of quantized Hall resistance and near-vanishing longitudinal resistivity in magnetically doped (Bi,Sb)(2)Te-3. Similar chiral conduction is expected along magnetic domain walls, but clear detection of these modes in MTIs has proven challenging. Here, we intentionally create a magnetic domain wall in an MTI, and study electrical transport along the domain wall. In agreement with theoretical predictions, we observe chiral transport along a domain wall. We present further evidence that two modes equilibrate while co-propagating along the length of the domain wall.
引用
收藏
页数:6
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