Trap states are known to be one of the key parameters limiting charge transport in organic semiconductors and hence the performance of organic solar cells. Here, small-molecule organic solar cells based on a bulk heterojunction between zinc-phtalocyanine (ZnPc) and the fullerene C60 are characterized according to their trapping nature by noninvasive methods and under ambient conditions. We show how impedance spectroscopy, applied to systematically varied device structures, reveals the trap localization as well as its occupation mechanisms. Further insight is given from investigations of different device working points and illumination intensities. Thus, we find the traps to be bulk states in the active layer with an electron-trapping nature. They can be described by a Gaussian energy distribution of 55 meV width, centered at 0.46 eV below the electron transport level and with a concentration of 3.5 x 10(16) cm(-3). Moreover, the trap states act as recombination centers in the presence of injected or photogenerated charge carriers. The results are confirmed by electrical simulations. DOI: 10.1103/PhysRevB.87.045432
机构:
Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
Suntech Power Co Ltd, Wuxi 214028, Peoples R ChinaJiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
Wu Jia-Qi
Li Wen-Jia
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Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
Suntech Power Co Ltd, Wuxi 214028, Peoples R ChinaJiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
Li Wen-Jia
Xi Xi
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Suntech Power Co Ltd, Wuxi 214028, Peoples R China
Jiangnan Univ, Sch Internet Things, Wuxi 214122, Peoples R ChinaJiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
Xi Xi
Meng Qing-Lei
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Suntech Power Co Ltd, Wuxi 214028, Peoples R China
Jiangsu Suntech Inst Photovolta Technol, Wuxi 214028, Peoples R ChinaJiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
Meng Qing-Lei
Ji Jing-Jian
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Suntech Power Co Ltd, Wuxi 214028, Peoples R China
Jiangsu Suntech Inst Photovolta Technol, Wuxi 214028, Peoples R ChinaJiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
Ji Jing-Jian
Gu Xiao-Feng
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Jiangnan Univ, Sch Internet Things, Wuxi 214122, Peoples R ChinaJiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
Gu Xiao-Feng
Li Guo-Hua
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Jiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
Jiangsu Suntech Inst Photovolta Technol, Wuxi 214028, Peoples R ChinaJiangnan Univ, Sch Sci, Wuxi 214122, Peoples R China
机构:
Vilnius Univ, Dept Semicond Phys, LT-10222 Vilnius, Lithuania
Vilnius Univ, Inst Appl Res, LT-10222 Vilnius, LithuaniaVilnius Univ, Dept Semicond Phys, LT-10222 Vilnius, Lithuania
Kazukauskas, V.
Arlauskas, A.
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Vilnius Univ, Dept Semicond Phys, LT-10222 Vilnius, Lithuania
Vilnius Univ, Inst Appl Res, LT-10222 Vilnius, LithuaniaVilnius Univ, Dept Semicond Phys, LT-10222 Vilnius, Lithuania
Arlauskas, A.
Pranaitis, M.
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Vilnius Univ, Dept Semicond Phys, LT-10222 Vilnius, Lithuania
Vilnius Univ, Inst Appl Res, LT-10222 Vilnius, LithuaniaVilnius Univ, Dept Semicond Phys, LT-10222 Vilnius, Lithuania