Simulation of resonant tunneling diodes with a generalized quantum transport theory

被引:1
|
作者
Ogawa, M [1 ]
Sugano, T [1 ]
Miyoshi, T [1 ]
机构
[1] Kobe Univ, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
关键词
D O I
10.1016/S0167-9317(99)00235-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Modeling of quantum transport based on the non-equilibrium Green functions is presented in resonant tunneling diodes (RTD's) where realistic band structures, space charge effect, and scattering effects are taken into account. We have developed a multiband, non-equilibrium Green function and Poisson simulator that employs multi-band (MB) tight binding calculation using a sp(3)s* hybridization. As a result, we have found that the multiband nature and polar optical phonon scattering effects significantly change the results of conventional RTD simulations.
引用
收藏
页码:365 / 368
页数:4
相关论文
共 50 条
  • [1] Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells
    Joon-Ho Lee
    Mincheol Shin
    Seok-Joo Byun
    Wangki Kim
    [J]. Journal of the Korean Physical Society, 2018, 72 : 622 - 627
  • [2] Wigner Transport Simulation of Resonant Tunneling Diodes with Auxiliary Quantum Wells
    Lee, Joon-Ho
    Shin, Mincheol
    Byun, Seok-Joo
    Kim, Wangki
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2018, 72 (05) : 622 - 627
  • [3] QUANTUM CAPACITANCE OF RESONANT TUNNELING DIODES
    HU, YM
    STAPLETON, S
    [J]. APPLIED PHYSICS LETTERS, 1991, 58 (02) : 167 - 169
  • [4] CHAOTIC BEHAVIOR OF QUANTUM RESONANT TUNNELING DIODES
    ZHOU, SG
    SWEENY, M
    XU, JM
    BEROLO, O
    [J]. PHYSICA D-NONLINEAR PHENOMENA, 1991, 52 (2-3) : 544 - 550
  • [5] Periodic orbit theory for resonant tunneling diodes: Comparison with quantum and experimental results
    Saraga, DS
    Monteiro, TS
    Rouben, DC
    [J]. PHYSICAL REVIEW E, 1998, 58 (03): : R2701 - R2704
  • [6] QUANTUM CHAOS IN RESONANT-TUNNELING DIODES
    FROMHOLD, TM
    EAVES, L
    SHEARD, FW
    FOSTER, TJ
    LEADBEATER, ML
    MAIN, PC
    [J]. PHYSICA B, 1994, 201 : 367 - 373
  • [7] QUANTUM CAPACITANCE OF RESONANT TUNNELING DIODES - COMMENT
    LURYI, S
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (18) : 2335 - 2336
  • [8] QUANTUM CAPACITANCE OF RESONANT TUNNELING DIODES - REPLY
    HU, YM
    STAPLETON, S
    [J]. APPLIED PHYSICS LETTERS, 1991, 59 (18) : 2336 - 2336
  • [9] SIMULATION OF INTRINSIC BISTABILITY IN RESONANT TUNNELING DIODES
    BABA, T
    MIZUTA, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (08): : L1322 - L1325
  • [10] Full multiband simulation of quantum electron transport in resonant tunneling devices
    Ogawa, M
    Sugano, T
    Miyoshi, T
    [J]. SOLID-STATE ELECTRONICS, 2000, 44 (11) : 1939 - 1947