Ar, Xe Ion Bombardment Effects on Film Characteristics of Ni Thin Film during Sputter Deposition Process

被引:2
|
作者
Kohri, Ami [1 ]
Hayashida, Fumihiko [1 ]
Shinohara, Yoshiaki [1 ]
Matsumura, Yoshihito [1 ]
机构
[1] Tokai Univ, Grad Sch Engn, Dept Appl Sci, Hiratsuka, Kanagawa 2591292, Japan
关键词
sputtering; ion bombardment; internal stress; magnetostriction; argon; xenon; ASSISTED DEPOSITION; INTERNAL-STRESS; IMPLANTATION; ANISOTROPY; GARNETS; GASES; MODEL;
D O I
10.2320/jinstmet.76.355
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Previously, as a means of expressing the effect of ion bombardment, we proposed an ion bombardment parameter P-i based on the magnitude of the ion momentum and impingement ratio of Ar ions to metal particles. As a result the internal stress of the ferromagnetic films can be controlled by ion bombardment parameter P-i. In this study, molecular mass effects with various sputtering gases such as Ar and Xe on magnetic thin films are quantitatively discussed with ion bombardment parameter P-i. The Ni thin films were prepared by the D.C. magnetron sputtering process. Sputtering gases were using Argon (Ar) and Xenon (Xe). Plasma diagnostics was carried out by single Langmuir-probe during the sputter deposition. The internal stress of the films varies linearly with ion bombardment parameter P-i, regardless of the sputtering gas species. In addition, the magnetostrictive susceptibility of the film is also dependent on P-i. Internal stress and magnetostrictive properties of Ni thin films could be controlled with ion bombardment parameter P-i.
引用
收藏
页码:355 / 358
页数:4
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