Germanium-on-Silicon Waveguide Engineering for Third Harmonic Generation in the Mid-Infrared

被引:14
|
作者
De Leonardis, Francesco [1 ]
Troia, Benedetto [1 ]
Soref, Richard A. [2 ]
Passaro, Vittorio M. N. [1 ]
机构
[1] Politecn Bari, Dept Elect & Informat Engn, Photon Res Grp, I-70125 Bari, Italy
[2] Univ Massachusetts, Boston, MA 02125 USA
关键词
Germanium technology; nonlinear optical devices; optical waveguides; third harmonic generation; 3RD-HARMONIC GENERATION; EFFICIENT; 3RD; EMISSION;
D O I
10.1109/JLT.2015.2496365
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we propose the rigorous and sophisticated engineering of germanium-on-silicon waveguides for the efficient wavelength conversion from 10.60 to 3.53 mu m and from 6 to 2 mu m by means of third harmonic generation. In our investigation, the influence of waveguide fabrication tolerances, sidewall tilting angles, crystallographic axis orientation, laser wavelength drifts, and chromatic dispersion on the phase matching between the pump and harmonic optical modes, has been taken into account. Finally, conversion efficiencies as high as -35.68 and -23.46 dB have been achieved theoretically in optimized straight waveguides and resonant microcavities, respectively, with a pump wavelength of 10.60 mu m.
引用
收藏
页码:5103 / 5113
页数:11
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